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ion-beam processing

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См. также в других словарях:

  • Ion Beam Mixing — is a process for adhering two multilayers, especially a substrate and deposited surface layer. The process involves bombarding layered samples with doses of ion radiation in order to promote mixing at the interface, and generally serves as a… …   Wikipedia

  • Gas cluster ion beam — Gas Cluster Ion Beams (GCIB) is a new technology for nano scale modification of surfaces. It can smooth a wide variety of surface material types to within an angstrom of roughness without subsurface damage. It is also used to chemically alter… …   Wikipedia

  • Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… …   Wikipedia

  • Ion plating — is a physical vapor deposition (PVD) process that is sometimes called ion assisted deposition (IAD) or ion vapor deposition (IVD) and is a version of vacuum deposition . Ion plating utilizes concurrent or periodic bombardment of the substrate and …   Wikipedia

  • Plasma-immersion ion implantation — (PIII) [cite book | title = Materials Science of Thin Films | author = Milton Ohring | publisher = Academic Press | year = 2002 | isbn = 0125249756 | url = http://books.google.com/books?id=SOt yFjV xwC pg=PA267… …   Wikipedia

  • Electron beam lithography — (often abbreviated as e beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist),cite book |last= McCord |first=M. A. |coauthors=M. J. Rooks |title=… …   Wikipedia

  • information processing — Acquisition, recording, organization, retrieval, display, and dissemination of information. Today the term usually refers to computer based operations. Information processing consists of locating and capturing information, using software to… …   Universalium

  • Chemical beam epitaxy — (CBE) forms an important class of deposition techniques for semiconductor layer systems, especially III V semiconductor systems. This form of epitaxial growth is performed in an ultrahigh vacuum system. The reactants are in the form of molecular… …   Wikipedia

  • Namiki Precision Jewel Co., Ltd. — Namiki Precision Jewel Co.,Ltd. 並木精密宝石株式会社 Type Kabushiki kaisha Founded 28 August 1953 Headquarters Adachi ku, Tokyo, Japan Key people Chairman and CEO: Shoji Namiki President: Yoichi …   Wikipedia

  • radiation — radiational, adj. /ray dee ay sheuhn/, n. 1. Physics. a. the process in which energy is emitted as particles or waves. b. the complete process in which energy is emitted by one body, transmitted through an intervening medium or space, and… …   Universalium

  • Microelectromechanical systems — (MEMS) (also written as micro electro mechanical, MicroElectroMechanical or microelectronic and microelectromechanical systems) is the technology of very small mechanical devices driven by electricity; it merges at the nano scale into… …   Wikipedia

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